X-Ray Diffraction Analysis of GaN/InGaN
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چکیده
منابع مشابه
DISORDERING OF InGaN/GaN SUPERLATTICES AFTER HIGH-PRESSURE ANNEALING
Interdiffusion of In and Ga is observed in InGaN multiple-quantum-well superlattices for annealing temperatures of 1250 to 1400°C. Hydrostatic pressures of up to 15 kbar were applied during the annealing treatments to prevent decomposition of the InGaN and GaN. In as-grown material, x-ray diffraction spectra show InGaN superlattice peaks up to the fourth order. After annealing at 1400°C for 15 ...
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تاریخ انتشار 2004